Auger Recombination in Semiconductors

silicon recombination energy momentum impurity semiconductor lifetime electron hole concentration

Authors

  • M. N. Alikulov
    Alikulov@gmail.co
    Candidate of Physical and Mathematical Sciences, Associate Professor of the Department of Physics, Karshi Engineering-Economics Institute, Karshi, Uzbekistan
Vol. 1 No. 3 (2021): August 2021
Articles
August 9, 2021

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The Auger recombinations occurring in semiconductors have been studied in this work. The theoretical and analytical data of Auger recombination processes in semiconductors with straight and complex bands are highlighted. The relationship between the rate of recombination and the structure of the bands of semiconductors has been studied. Expressions of the laws of conservation of energy and momenta are given for the processes of recombination of semiconductors with straight bands.

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